US PATENT SUBCLASS 438 / 558
.~.~ From solid dopant source in contact with semiconductor region

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
558.~.~ From solid dopant source in contact with semiconductor region {6}
559  DF  .~.~.~> Using capping layer over dopant source to prevent out-diffusion of dopant
560  DF  .~.~.~> Plural diffusion stages
561  DF  .~.~.~> Dopant source within trench or groove
562  DF  .~.~.~> Organic source
563  DF  .~.~.~> Glassy source or doped oxide
564  DF  .~.~.~> Polycrystalline semiconductor source

DEFINITION

Classification: 438/558

From solid dopant source in contact with semiconductor region:

(under subclass 542) Processes wherein the electrically active impurity is produced by a solid substance which is in physical contact with the semiconductor region to be doped.