US PATENT SUBCLASS 438 / 561
.~.~.~ Dopant source within trench or groove

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
558  DF  .~.~ From solid dopant source in contact with semiconductor region {6}
561.~.~.~ Dopant source within trench or groove

DEFINITION

Classification: 438/561

Dopant source within trench or groove:

(under subclass 558) Processes wherein the solid dopant source material resides within the confines of a recessed region in the semiconductor substrate.