US PATENT SUBCLASS 438 / 564
.~.~.~ Polycrystalline semiconductor source

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
558  DF  .~.~ From solid dopant source in contact with semiconductor region {6}
564.~.~.~ Polycrystalline semiconductor source

DEFINITION

Classification: 438/564

Polycrystalline semiconductor source:

(under subclass 558) Processes wherein the solid dopant source material is composed of a multicrystalline semiconductor (i.e., polysilicon).