US PATENT SUBCLASS 438 / 556
.~.~ Edge diffusion by using edge portion of structure other than masking layer to mask

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
556.~.~ Edge diffusion by using edge portion of structure other than masking layer to mask

DEFINITION

Classification: 438/556

Edge diffusion by using edge portion of structure other than masking layer to mask:

(under subclass 542) Processes using an edge feature of the substrate other than a masking layer to retard the diffusion of the electrically active impurity.