US PATENT SUBCLASS 438 / 551
.~.~ Using multiple layered mask

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
551.~.~ Using multiple layered mask {1}
552  DF  .~.~.~> Having plural predetermined openings in master mask

DEFINITION

Classification: 438/551

Using multiple layered mask:

(under subclass 542) Processes involving use of a mask composed of plural layers to retard the diffusion of an electrically active impurity.