US PATENT SUBCLASS 438 / FOR 125
.~.~.~ Sequentially etching the same surface of a substrate (156/651.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 124  DF  .~.~ Sequential application of etchant material (156/650.1) {1}
FOR 125.~.~.~ Sequentially etching the same surface of a substrate (156/651.1) {1}
FOR 126  DF  .~.~.~.~> Each etching exposes surface of an adjacent layer (156/652.1) {1}

DEFINITION

Classification: 438/FOR.125

Sequentially etching the same surface of a substrate:

Foreign art collection for processes wherein the plural

etching steps are carried at the same location on the substrate at different times.