US PATENT SUBCLASS 438 / FOR 122
.~.~ Etching isolates or modifies a junction in a barrier layer (156/648.1)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 122.~.~ Etching isolates or modifies a junction in a barrier layer (156/648.1) {1}
FOR 123  DF  .~.~.~> Discrete junction isolated (e.g., mesa formation, etc.) (156/649.1)

DEFINITION

Classification: 438/FOR.122

Etching isolates or modifies a junction in a barrier layer:

Foreign art collection for processes wherein a substrate which includes a junction in a barrier layer is treated with an etchant which contacts and removes at least a portion of the junction or removes material to isolate or separate one junction from another.