US PATENT SUBCLASS 438 / 434
.~.~.~ From doped insulator in groove

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
433  DF  .~.~ Dopant addition {1}
434.~.~.~ From doped insulator in groove

DEFINITION

Classification: 438/434

From doped insulator in groove:

(under subclass 433) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material wherein the semiconductor regions are doped from a doped insulator residing in the groove.