US PATENT SUBCLASS 438 / 433
.~.~ Dopant addition

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
433.~.~ Dopant addition {1}
434  DF  .~.~.~> From doped insulator in groove

DEFINITION

Classification: 438/433

Dopant addition:

(under subclass 424) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material combined with a step of introducing an electrically active dopant species into a semiconductive region of the substrate.