US PATENT SUBCLASS 438 / 424
.~ Grooved and refilled with deposited dielectric material

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424.~ Grooved and refilled with deposited dielectric material {7}
425  DF  .~.~> Combined with formation of recessed oxide by localized oxidation {1}
427  DF  .~.~> Refilling multiple grooves of different widths or depths {1}
429  DF  .~.~> And epitaxial semiconductor formation in groove
430  DF  .~.~> And deposition of polysilicon or noninsulative material into groove {1}
433  DF  .~.~> Dopant addition {1}
435  DF  .~.~> Multiple insulative layers in groove {2}
438  DF  .~.~> Reflow of insulator

DEFINITION

Classification: 438/424

Grooved and refilled with deposited dielectric material:

(under subclass 400) Process for making electrically isolated laterally spaced semiconductor regions including a step of forming a recess or trench in the semiconductive substrate and refilling the same with deposited insulative material.