US PATENT SUBCLASS 438 / 430
.~.~ And deposition of polysilicon or noninsulative material into groove

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
430.~.~ And deposition of polysilicon or noninsulative material into groove {1}
431  DF  .~.~.~> Oxidation of deposited material {1}

DEFINITION

Classification: 438/430

And deposition of polysilicon or noninsulative material into groove:

(under subclass 424) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material wherein polysilicon or noninsulative material is deposited into the groove.