US PATENT SUBCLASS 438 / 431
.~.~.~ Oxidation of deposited material

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
430  DF  .~.~ And deposition of polysilicon or noninsulative material into groove {1}
431.~.~.~ Oxidation of deposited material {1}
432  DF  .~.~.~.~> Nonoxidized portions remaining in groove after oxidation

DEFINITION

Classification: 438/431

Oxidation of deposited material:

(under subclass 430) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material including a step of oxidizing the polysilicon or noninsulative material deposited into the groove.