US PATENT SUBCLASS 438 / 432
.~.~.~.~ Nonoxidized portions remaining in groove after oxidation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
430  DF  .~.~ And deposition of polysilicon or noninsulative material into groove {1}
431  DF  .~.~.~ Oxidation of deposited material {1}
432.~.~.~.~ Nonoxidized portions remaining in groove after oxidation

DEFINITION

Classification: 438/432

Nonoxidized portions remaining in groove after oxidation:

(under subclass 431) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material wherein at least a portion of the polysilicon or noninsulative material deposited into the groove remains after the oxidation step.