US PATENT SUBCLASS 438 / 429
.~.~ And epitaxial semiconductor formation in groove

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
429.~.~ And epitaxial semiconductor formation in groove

DEFINITION

Classification: 438/429

And epitaxial semiconductor formation in groove:

(under subclass 424) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material including a step of epitaxially depositing semiconductive material in the groove.