US PATENT SUBCLASS 438 / 425
.~.~ Combined with formation of recessed oxide by localized oxidation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
425.~.~ Combined with formation of recessed oxide by localized oxidation {1}
426  DF  .~.~.~> Recessed oxide laterally extending from groove

DEFINITION

Classification: 438/425

Combined with formation of recessed oxide by localized oxidation:

(under subclass 424) Process for making electrically isolated laterally spaced semiconductor regions by grooving and

refilling with insulative material including the step of forming an embedded oxide by localized oxidation (of semiconductor material).

(1) Note. To be proper herein, the locally oxidized regions must consume semiconductor regions of the substrate (i.e., other than the oxidation solely of deposited layers residing within the groove). Additionally, the uppermost surface of the embedded oxide must be physically below the adjoining semiconductor top surface.

SEE OR SEARCH THIS CLASS, SUBCLASS:

444, for a process of forming a recessed oxide electrical isolation structure by localized oxidation including a preliminary step of forming a groove into the semiconductor substrate.