US PATENT SUBCLASS 438 / 426
.~.~.~ Recessed oxide laterally extending from groove

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
424  DF  .~ Grooved and refilled with deposited dielectric material {7}
425  DF  .~.~ Combined with formation of recessed oxide by localized oxidation {1}
426.~.~.~ Recessed oxide laterally extending from groove

DEFINITION

Classification: 438/426

Recessed oxide laterally extending from groove:

(under subclass 425) Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material whereby the embedded oxidized region extends laterally from the groove region.