US PATENT SUBCLASS 438 / 141
MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

141MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)


DEFINITION

Classification: 438/141

MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.):

(under the class definition) Process for making a conductivity modulation device structure which has a high resistivity semiconductor region of one conductivity-type having a region of opposite conductivity-type forming a pn junction with a central portion of the high resistivity region, with structural means provided to forward bias the pn junction to inject minority carriers into the high resistivity region to vary its conductivity producing modulated wave response (i.e., conductivity modulation).

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

212, for a conductivity modulation device.

388, Electricity: Motor Control Systems,

919, for unijunction transistor circuit trigger control means.