US PATENT SUBCLASS 438 / 230
.~.~.~.~ Utilizing gate sidewall structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
229  DF  .~.~.~ Self-aligned {2}
230.~.~.~.~ Utilizing gate sidewall structure {1}
231  DF  .~.~.~.~.~> Plural doping steps

DEFINITION

Classification: 438/230

Utilizing gate sidewall structure:

(under subclass 229) Process with a step of utilizing a structure located on the sidewall of the gate electrode as the previously formed device feature.