US PATENT SUBCLASS 438 / 231
.~.~.~.~.~ Plural doping steps

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
229  DF  .~.~.~ Self-aligned {2}
230  DF  .~.~.~.~ Utilizing gate sidewall structure {1}
231.~.~.~.~.~ Plural doping steps

DEFINITION

Classification: 438/231

Plural doping steps:

(under subclass 230) Process including multiple steps of introducing electrically active dopant species into semiconductor regions of the substrate.