US PATENT SUBCLASS 438 / FOR 236
.~.~.~ By up-diffusion from substrate region and down diffusion into upper surface layer (437/76)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 234  DF  .~.~ Isolation by PN junction only (437/74) {4}
FOR 236.~.~.~ By up-diffusion from substrate region and down diffusion into upper surface layer (437/76) {1}
FOR 237  DF  .~.~.~.~> Substrate and epitaxial regions of same conductivity type, i.e., P or N (437/77)

DEFINITION

Classification: 438/FOR.236

By up-diffusion from substrate region and down diffusion into upper surface layer:

Foreign art collection for processes for forming the isolation by upward diffusion from the substrate into the upper region and downward diffusion from the upper region into the substrate.