US PATENT SUBCLASS 438 / FOR 234
.~.~ Isolation by PN junction only (437/74)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 234.~.~ Isolation by PN junction only (437/74) {4}
FOR 235  DF  .~.~.~> By diffusion from upper surface only (437/75)
FOR 236  DF  .~.~.~> By up-diffusion from substrate region and down diffusion into upper surface layer (437/76) {1}
FOR 238  DF  .~.~.~> By etching and refilling with semiconductor material having diverse conductivity (437/78)
FOR 239  DF  .~.~.~> Using polycrystalline region (437/79)

DEFINITION

Classification: 438/FOR.234

Isolation by PN junction only:

Foreign art collection for processes wherein only PN junction formation isolates the device regions.