US PATENT SUBCLASS 438 / 745
.~ Liquid phase etching


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
745.~ Liquid phase etching {9}
746  DF  .~.~> Utilizing electromagnetic or wave energy
747  DF  .~.~> With relative movement between substrate and confined pool of etchant
748  DF  .~.~> Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant
749  DF  .~.~> Sequential application of etchant {1}
752  DF  .~.~> Germanium
753  DF  .~.~> Silicon
754  DF  .~.~> Electrically conductive material (e.g., metal, conductive oxide, etc.) {1}
756  DF  .~.~> Silicon oxide
757  DF  .~.~> Silicon nitride


DEFINITION

Classification: 438/745

Liquid phase etching:

(under subclass 689) Processes wherein the chemical etchant is in a liquid state when brought into contact with the semiconductive substrate.