US PATENT SUBCLASS 438 / 689
CHEMICAL ETCHING

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689CHEMICAL ETCHING {6}
690  DF  .~> Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) {1}
694  DF  .~> Combined with coating step {5}
704  DF  .~> Having liquid and vapor etching steps
705  DF  .~> Altering etchability of substrate region by compositional or crystalline modification
706  DF  .~> Vapor phase etching (i.e., dry etching) {3}
745  DF  .~> Liquid phase etching {9}

DEFINITION

Classification: 438/689

CHEMICAL ETCHING:

(under the class definition) Processes having a step of removing material from a semiconductor substrate through the action of a chemical agent, wherein the intent is to use the electrical properties of the semiconductor for at least one of the purposes outlined in section I, C, of the class definition for this class (438).

SEE OR SEARCH CLASS

204, Chemistry: Electrical and Wave Energy,

192.32+, for a process of sputter etching.

205, Electrolysis: Processes, Compositions Used Therein, and Methods of Preparing the Compositions,

640+, for methods of electrolytic erosion of a substrate, particularly subclass 656 for erosion of a substrate of nonuniform internal electrical characteristics.

216, Etching a Substrate: Processes, appropriate subclasses for a process of chemical etching a generic substrate.