US PATENT SUBCLASS 438 / 705
.~ Altering etchability of substrate region by compositional or crystalline modification


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
705.~ Altering etchability of substrate region by compositional or crystalline modification


DEFINITION

Classification: 438/705

Altering etchability of substrate region by compositional or crystalline modification:

(under subclass 689) Processes wherein the manner in which a semiconductor substrate is etched by a chemical etchant is altered by contacting the substrate prior to etching (a) with a material which alloys or diffuses into a substrate region or (b) by modifying the crystalline structure of a substrate region (e.g., amorphosizing, introducing dislocations, etc.).