US PATENT SUBCLASS 438 / 706
.~ Vapor phase etching (i.e., dry etching)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706.~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~> Utilizing electromagnetic or wave energy {3}
734  DF  .~.~> Sequential etching steps on a single layer
735  DF  .~.~> Differential etching of semiconductor substrate {2}

DEFINITION

Classification: 438/706

Vapor phase etching (i.e., dry etching):

(under subclass 689) Processes wherein the chemical etchant is in a gaseous state when brought into contact with the semiconductive substrate.

(1) Note. A colloidal dispersion having fine droplets of an etchant is not considered to be vapor phase for the purposes of this and its indented subclass.

SEE OR SEARCH THIS CLASS, SUBCLASS:

477, for a gettering process in which the semiconductor substrate is treated with a reactive gas mixture which preferentially forms volatile compounds with certain undesired impurities.