US PATENT SUBCLASS 438 / 735
.~.~ Differential etching of semiconductor substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735.~.~ Differential etching of semiconductor substrate {2}
736  DF  .~.~.~> Utilizing multilayered mask
737  DF  .~.~.~> Substrate possessing multiple layers {4}

DEFINITION

Classification: 438/735

Differential etching of semiconductor substrate:

(under subclass 706) Processes directed to (a) contact only selected surface areas of the substrate with the etchant to remove a constituent part of the substrate at the selected surface areas only or (b) cause the substrate to be treated at different rates in different areas to produce a nonuniform surface.