US PATENT SUBCLASS 438 / 737
.~.~.~ Substrate possessing multiple layers

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
737.~.~.~ Substrate possessing multiple layers {4}
738  DF  .~.~.~.~> Selectively etching substrate possessing multiple layers of differing etch characteristics {2}
742  DF  .~.~.~.~> Electrically conductive material (e.g., metal, conductive oxide, etc.)
743  DF  .~.~.~.~> Silicon oxide or glass
744  DF  .~.~.~.~> Silicon nitride

DEFINITION

Classification: 438/737

Substrate possessing multiple layers:

(under subclass 735) Processes wherein the semiconductor substrate undergoing etching possesses plural layers.