US PATENT SUBCLASS 438 / 738
.~.~.~.~ Selectively etching substrate possessing multiple layers of differing etch characteristics

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
737  DF  .~.~.~ Substrate possessing multiple layers {4}
738.~.~.~.~ Selectively etching substrate possessing multiple layers of differing etch characteristics {2}
739  DF  .~.~.~.~.~> Lateral etching of intermediate layer (i.e., undercutting)
740  DF  .~.~.~.~.~> Utilizing etch stop layer {1}

DEFINITION

Classification: 438/738

Selectively etching substrate possessing multiple layers of differing etch characteristics:

(under subclass 737) Process involving the etching of a multilayered substrate, using a single etching step, where the process parameters used causes a difference of the etching rate or characteristic in at least two different layers of the substrate.