US PATENT SUBCLASS 438 / 740
.~.~.~.~.~ Utilizing etch stop layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
737  DF  .~.~.~ Substrate possessing multiple layers {4}
738  DF  .~.~.~.~ Selectively etching substrate possessing multiple layers of differing etch characteristics {2}
740.~.~.~.~.~ Utilizing etch stop layer {1}
741  DF  .~.~.~.~.~.~> PN junction functions as etch stop

DEFINITION

Classification: 438/740

Utilizing etch stop layer:

(under subclass 738) Processes wherein the selective etching is effected through the use of a material resistant to the etchant.