US PATENT SUBCLASS 438 / 739
.~.~.~.~.~ Lateral etching of intermediate layer (i.e., undercutting)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
737  DF  .~.~.~ Substrate possessing multiple layers {4}
738  DF  .~.~.~.~ Selectively etching substrate possessing multiple layers of differing etch characteristics {2}
739.~.~.~.~.~ Lateral etching of intermediate layer (i.e., undercutting)

DEFINITION

Classification: 438/739

Lateral etching of intermediate layer (i.e., undercutting):

(under subclass 738) Processes wherein an intermediate layer on the substrate is etched laterally to the major surface thereof.