US PATENT SUBCLASS 438 / 744
.~.~.~.~ Silicon nitride

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
737  DF  .~.~.~ Substrate possessing multiple layers {4}
744.~.~.~.~ Silicon nitride

DEFINITION

Classification: 438/744

Silicon nitride:

(under subclass 737) Process wherein the material undergoing etching with the energized gas is a compound of silicon and nitrogen.