US PATENT SUBCLASS 438 / 736
.~.~.~ Utilizing multilayered mask


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
736.~.~.~ Utilizing multilayered mask


DEFINITION

Classification: 438/736

Utilizing multilayered mask:

(under subclass 735) Processes wherein selected regions of the semiconductor substrate are protected from the effects of the etching gas through use of a mask composed of plural layers.