US PATENT SUBCLASS 438 / 136
.~.~ Junction gate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

133  DF  MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) {4}
135  DF  .~ Having field effect structure {2}
136.~.~ Junction gate {1}
137  DF  .~.~.~> Vertical channel

DEFINITION

Classification: 438/136

Junction gate:

(under subclass 135) Process for making a regenerative switching device which possesses a gate electrode which forms a PN (rectifying) junction with the semiconductor substrate.