US PATENT SUBCLASS 438 / 135
.~ Having field effect structure


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

133  DF  MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) {4}
135.~ Having field effect structure {2}
136  DF  .~.~> Junction gate {1}
138  DF  .~.~> Vertical channel


DEFINITION

Classification: 438/135

Having field effect structure:

(under subclass 133) Process wherein the regenerative switching device includes or is combined with a field effect structure (i.e., wherein the current through a active channel

region is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof).

(1) Note. Includes amplifying gate-type and optical turn-on-type structures.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

133+, for a regenerative device combined with a field effect transistor.