US PATENT SUBCLASS 438 / 133
MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

133MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) {4}
134  DF  .~> Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)
135  DF  .~> Having field effect structure {2}
139  DF  .~> Altering electrical characteristic
140  DF  .~> Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)

DEFINITION

Classification: 438/133

MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.):

(under the class definition) Process for making a switching device structure acting as if it has two or more active emitter junctions each of which is associated with a separate, equivalent transistor having an individual gain and which, when initiated by a base region current, causes the

equivalent transistors to mutually drive each other in a regenerative manner to lower the voltage drop between emitter regions.

(1) Note. If the current is above a level Ih, called the "holding current", then the device will remain ON when the triggering signal is removed by the regenerative feedback therebetween, and is then said to be "latched.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

107+, for a regenerative-type switching device.

361, Electricity: Electrical Systems and Devices,

100+, and 205 for circuits employing thyristors (e.g., silicon controlled rectifiers (SCRs)) 363, Electric Power Conversion Systems,

27+, 54, 57+, 68, 85+, 96+, 128+, 135+, and 160+ for circuits employing thyristors (e.g., silicon controlled rectifiers (SCRs))