US PATENT SUBCLASS 438 / 140
.~ Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

133  DF  MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) {4}
140.~ Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)

DEFINITION

Classification: 438/140

Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.):

(under subclass 133) Process for making a regenerative switching device having a structure for increasing the breakdown voltage of the device (e.g., beveled junction, contoured edge, etc.).

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

168+, for a regenerative-type switching device having means to increase breakdown voltage.