US PATENT SUBCLASS 438 / 137
.~.~.~ Vertical channel

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

133  DF  MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) {4}
135  DF  .~ Having field effect structure {2}
136  DF  .~.~ Junction gate {1}
137.~.~.~ Vertical channel

DEFINITION

Classification: 438/137

Vertical channel:

(under subclass 136) Process for making a junction gate regenerative-type switching device wherein the active channel is configured to provide, in whole or in part, a vertically conductive pathway between source and drain regions.