US PATENT SUBCLASS 438 / FOR 360
.~.~ Silicide of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten), (437/200)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 340  DF  MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13}
FOR 356  DF  .~ Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196) {4}
FOR 360.~.~ Silicide of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten), (437/200)

DEFINITION

Classification: 438/FOR.360

Silicide of Ti(Titanium), Zr(Zirconium), Hf(Hafnium), V(Vanadium), Nb(Niobium), Ta(Tantalum), Cr(Chromium), Mo(Molybdenum), W(Tungsten),:

Foreign art collection for processes for forming contact using chemical combinations of Si(Silicon) and anyone of

Ti(Titanium), Zr(Zirconium), Hf(Hafnium), V(Vanadium), Nb(Niobium), Ta(Tantalum), Cr(Chromium), Mo(Molybdenum), W(Tungsten).