US PATENT SUBCLASS 438 / FOR 356
.~ Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 340  DF  MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13}
FOR 356.~ Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196) {4}
FOR 357  DF  .~.~> Al (Aluminum) alloy (437/197) {2}
FOR 360  DF  .~.~> Silicide of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten), (437/200)
FOR 361  DF  .~.~> Of plantinum metal group Ru (Ruthenium), Rh (Rhodium), Pd (Palladium), Os (Osmium), Ir (Iridium), Pt (Platinum) (437/201)
FOR 362  DF  .~.~> By fusing metal with semiconductor (alloying) (437/202)

DEFINITION

Classification: 438/FOR.356

Forming electrode of alloy or electrode of a compound of Si (Silicon):

Foreign art collection for processes for making a contact from a mixture of metals or a chemical compound of Si (Silicon).