US PATENT SUBCLASS 438 / 399
.~.~ Having contacts formed by selective growth or deposition

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
396  DF  .~ Stacked capacitor {3}
399.~.~ Having contacts formed by selective growth or deposition

DEFINITION

Classification: 438/399

Having contacts formed by selective growth or deposition:

(under subclass 396) Process for making a stacked capacitor wherein electrical contacts are formed by selective growth or deposition of conductive material onto the substrate.