US PATENT SUBCLASS 438 / 536
.~.~ Recoil implantation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
535  DF  .~ By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.) {1}
536.~.~ Recoil implantation

DEFINITION

Classification: 438/536

Recoil implantation:

(under subclass 535) Process involving the use of kinetic energy via the use of applied corpuscular or electromagnetic radiation for introduction of an electrically active dopant species to a semiconductive region of the substrate whereby at least a portion of the kinetic energy travels in other than a straight path (e.g., bounces back and forth).

SEE OR SEARCH CLASS

204, Chemistry: Electrical and Wave Energy, especially

192.11, for ion beam sputter deposition.