US PATENT SUBCLASS 438 / 420
.~.~ Plural doping steps

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
414  DF  .~ Isolation by PN junction only {3}
420.~.~ Plural doping steps

DEFINITION

Classification: 438/420

Plural doping steps:

(under subclass 414) Process for making an junction isolated laterally spaced semiconductor regions including multiple steps of introducing an electrically active dopant species into semiconductive regions of the substrate.