US PATENT SUBCLASS 438 / 414
.~ Isolation by PN junction only

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
414.~ Isolation by PN junction only {3}
415  DF  .~.~> Thermomigration
416  DF  .~.~> With epitaxial semiconductor formation {2}
420  DF  .~.~> Plural doping steps

DEFINITION

Classification: 438/414

Isolation by PN junction only:

(under subclass 400) Process whereby the laterally spaced regions of the semiconductor substrate are electrically isolated solely through the use of properly biased PN junctions.