US PATENT SUBCLASS 438 / 416
.~.~ With epitaxial semiconductor formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
414  DF  .~ Isolation by PN junction only {3}
416.~.~ With epitaxial semiconductor formation {2}
417  DF  .~.~.~> And simultaneous polycrystalline growth
418  DF  .~.~.~> Dopant addition {1}

DEFINITION

Classification: 438/416

With epitaxial semiconductor formation:

(under subclass 414) Process for making junction isolated

laterally spaced semiconductor regions having a step of epitaxially depositing a semiconductor layer.