US PATENT SUBCLASS 438 / 731
.~.~.~.~.~.~ Using intervening shield structure

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
729  DF  .~.~.~.~ Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma {1}
730  DF  .~.~.~.~.~ Producing energized gas remotely located from substrate {1}
731.~.~.~.~.~.~ Using intervening shield structure

DEFINITION

Classification: 438/731

Using intervening shield structure:

(under subclass 730) Processes wherein a blocking means is interposed between the region generating the energized gas and the region in which the semiconductor substrate resides.