US PATENT SUBCLASS 438 / 730
.~.~.~.~.~ Producing energized gas remotely located from substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
729  DF  .~.~.~.~ Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma {1}
730.~.~.~.~.~ Producing energized gas remotely located from substrate {1}
731  DF  .~.~.~.~.~.~> Using intervening shield structure

DEFINITION

Classification: 438/730

Producing energized gas remotely located from substrate:

(under subclass 729) Processes wherein the etching gas is energized in a region spaced apart from the region in which the semiconductor substrate is located.