US PATENT SUBCLASS 438 / FOR 317
.~.~ Laterally under mask (437/157)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 301  DF  .~ Diffusing a dopant (437/141) {17}
FOR 317.~.~ Laterally under mask (437/157)

DEFINITION

Classification: 438/FOR.317

Laterally under mask:

Foreign art collection for processes wherein the diffusion is carried out on a slanted angle under the mask.