US PATENT SUBCLASS 438 / 265
.~.~.~ Oxidizing sidewall of gate electrode

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
257  DF  .~.~ Having additional gate electrode surrounded by dielectric (i.e., floating gate) {8}
265.~.~.~ Oxidizing sidewall of gate electrode

DEFINITION

Classification: 438/265

Oxidizing sidewall of gate electrode:

(under subclass 257) Process for making a floating gate-type field effect transistor including a step of forming a dielectric sidewall on the gate electrode by reacting the gate electrode material with oxygen.