US PATENT SUBCLASS 438 / FOR 121
.~.~ Etching according to crystalline planes (156/647.1)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 121.~.~ Etching according to crystalline planes (156/647.1)

DEFINITION

Classification: 438/FOR.121

Etching according to crystalline planes:

Foreign art collection for processes wherein the substrate is at least partially crystalline and the etchant selectively etches the crystals at different rates along different axes or planes of orientation.