| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| 758 | DF | COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6} |
| 778 |  | .~ Insulative material deposited upon semiconductive substrate {8} |
| 779 | DF | .~.~> Compound semiconductor substrate |
| 780 | DF | .~.~> Depositing organic material (e.g., polymer, etc.) {1} |
| 782 | DF | .~.~> With substrate handling during coating (e.g., immersion, spinning, etc.) |
| 783 | DF | .~.~> Insulative material having impurity (e.g., for altering physical characteristics, etc.) {1} |
| 785 | DF | .~.~> Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) |
| 786 | DF | .~.~> Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) |
| 787 | DF | .~.~> Silicon oxide formation {2} |
| 791 | DF | .~.~> Silicon nitride formation {2} |